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Pesquisa : L01.224.230.260.115.475 [Categoria DeCS]
Referências encontradas : 380 [refinar]
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[PMID]:28268695
[Au] Autor:Hegde N; Melanson E; Sazonov E
[Ti] Título:Development of a real time activity monitoring Android application utilizing SmartStep.
[So] Source:Conf Proc IEEE Eng Med Biol Soc;2016:1886-1889, 2016 08.
[Is] ISSN:1557-170X
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:Footwear based activity monitoring systems are becoming popular in academic research as well as consumer industry segments. In our previous work, we had presented developmental aspects of an insole based activity and gait monitoring system-SmartStep, which is a socially acceptable, fully wireless and versatile insole. The present work describes the development of an Android application that captures the SmartStep data wirelessly over Bluetooth Low energy (BLE), computes features on the received data, runs activity classification algorithms and provides real time feedback. The development of activity classification methods was based on the the data from a human study involving 4 participants. Participants were asked to perform activities of sitting, standing, walking, and cycling while they wore SmartStep insole system. Multinomial Logistic Discrimination (MLD) was utilized in the development of machine learning model for activity prediction. The resulting classification model was implemented in an Android Smartphone. The Android application was benchmarked for power consumption and CPU loading. Leave one out cross validation resulted in average accuracy of 96.9% during model training phase. The Android application for real time activity classification was tested on a human subject wearing SmartStep resulting in testing accuracy of 95.4%.
[Mh] Termos MeSH primário: Dispositivos de Armazenamento em Computador
Marcha
Monitorização Fisiológica
[Mh] Termos MeSH secundário: Seres Humanos
Postura
Smartphone
Caminhada
[Pt] Tipo de publicação:JOURNAL ARTICLE
[Em] Mês de entrada:1709
[Cu] Atualização por classe:171120
[Lr] Data última revisão:
171120
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:170309
[St] Status:MEDLINE
[do] DOI:10.1109/EMBC.2016.7591089


  2 / 380 MEDLINE  
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[PMID]:27992513
[Au] Autor:Melo AH; Macêdo MA
[Ad] Endereço:Department of Physics, Federal University of Sergipe, São-Cristóvão, Sergipe, Brazil.
[Ti] Título:Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
[So] Source:PLoS One;11(12):e0168515, 2016.
[Is] ISSN:1932-6203
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.
[Mh] Termos MeSH primário: Dispositivos de Armazenamento em Computador
Membranas Artificiais
Óxido de Zinco
[Pt] Tipo de publicação:JOURNAL ARTICLE
[Nm] Nome de substância:
0 (Membranes, Artificial); SOI2LOH54Z (Zinc Oxide)
[Em] Mês de entrada:1706
[Cu] Atualização por classe:170630
[Lr] Data última revisão:
170630
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:161220
[St] Status:MEDLINE
[do] DOI:10.1371/journal.pone.0168515


  3 / 380 MEDLINE  
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[PMID]:26763827
[Au] Autor:Kim J; Son D; Lee M; Song C; Song JK; Koo JH; Lee DJ; Shim HJ; Kim JH; Lee M; Hyeon T; Kim DH
[Ad] Endereço:Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea.; School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea.
[Ti] Título:A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.
[So] Source:Sci Adv;2(1):e1501101, 2016 Jan.
[Is] ISSN:2375-2548
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.
[Mh] Termos MeSH primário: Dispositivos de Armazenamento em Computador
Armazenamento e Recuperação da Informação/métodos
Nanopartículas/química
Nanotecnologia/instrumentação
Silício/química
[Mh] Termos MeSH secundário: Eletrônica/instrumentação
Desenho de Equipamento/ética
Desenho de Equipamento/métodos
Microscopia de Força Atômica/métodos
Nanoestruturas/química
Nanotecnologia/métodos
[Pt] Tipo de publicação:JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T
[Nm] Nome de substância:
Z4152N8IUI (Silicon)
[Em] Mês de entrada:1609
[Cu] Atualização por classe:170220
[Lr] Data última revisão:
170220
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:160115
[St] Status:MEDLINE
[do] DOI:10.1126/sciadv.1501101


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[PMID]:26530587
[Au] Autor:Clarke D
[Ti] Título:E-Portfolio makes document storage straightforward.
[So] Source:Nurs Stand;30(10):31, 2015 Nov 04.
[Is] ISSN:2047-9018
[Cp] País de publicação:England
[La] Idioma:eng
[Mh] Termos MeSH primário: Computação em Nuvem/utilização
Dispositivos de Armazenamento em Computador
Documentação
[Mh] Termos MeSH secundário: Reino Unido
[Pt] Tipo de publicação:LETTER
[Em] Mês de entrada:1702
[Cu] Atualização por classe:170214
[Lr] Data última revisão:
170214
[Sb] Subgrupo de revista:N
[Da] Data de entrada para processamento:151105
[St] Status:MEDLINE
[do] DOI:10.7748/ns.30.10.31.s39


  5 / 380 MEDLINE  
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[PMID]:26451818
[Au] Autor:Chacón A; Marco-Sola S; Espinosa A; Ribeca P; Moure JC
[Ti] Título:Boosting the FM-Index on the GPU: Effective Techniques to Mitigate Random Memory Access.
[So] Source:IEEE/ACM Trans Comput Biol Bioinform;12(5):1048-59, 2015 Sep-Oct.
[Is] ISSN:1557-9964
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:The recent advent of high-throughput sequencing machines producing big amounts of short reads has boosted the interest in efficient string searching techniques. As of today, many mainstream sequence alignment software tools rely on a special data structure, called the FM-index, which allows for fast exact searches in large genomic references. However, such searches translate into a pseudo-random memory access pattern, thus making memory access the limiting factor of all computation-efficient implementations, both on CPUs and GPUs. Here, we show that several strategies can be put in place to remove the memory bottleneck on the GPU: more compact indexes can be implemented by having more threads work cooperatively on larger memory blocks, and a k-step FM-index can be used to further reduce the number of memory accesses. The combination of those and other optimisations yields an implementation that is able to process about two Gbases of queries per second on our test platform, being about 8 × faster than a comparable multi-core CPU version, and about 3 × to 5 × faster than the FM-index implementation on the GPU provided by the recently announced Nvidia NVBIO bioinformatics library.
[Mh] Termos MeSH primário: Algoritmos
Gráficos por Computador/instrumentação
Dispositivos de Armazenamento em Computador
Sequenciamento de Nucleotídeos em Larga Escala/instrumentação
Armazenamento e Recuperação da Informação/métodos
Processamento de Sinais Assistido por Computador/instrumentação
[Mh] Termos MeSH secundário: Desenho de Equipamento
Análise de Falha de Equipamento
[Pt] Tipo de publicação:JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T
[Em] Mês de entrada:1607
[Cu] Atualização por classe:161020
[Lr] Data última revisão:
161020
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:151010
[St] Status:MEDLINE
[do] DOI:10.1109/TCBB.2014.2377716


  6 / 380 MEDLINE  
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[PMID]:26422374
[Au] Autor:Wandelt S; Leser U
[Ad] Endereço:Knowledge Management in Bioinformatics, Humboldt-University of Berlin, Rudower Chaussee 25, 12489 Berlin, Germany.
[Ti] Título:Sequence Factorization with Multiple References.
[So] Source:PLoS One;10(9):e0139000, 2015.
[Is] ISSN:1932-6203
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:The success of high-throughput sequencing has lead to an increasing number of projects which sequence large populations of a species. Storage and analysis of sequence data is a key challenge in these projects, because of the sheer size of the datasets. Compression is one simple technology to deal with this challenge. Referential factorization and compression schemes, which store only the differences between input sequence and a reference sequence, gained lots of interest in this field. Highly-similar sequences, e.g., Human genomes, can be compressed with a compression ratio of 1,000:1 and more, up to two orders of magnitude better than with standard compression techniques. Recently, it was shown that the compression against multiple references from the same species can boost the compression ratio up to 4,000:1. However, a detailed analysis of using multiple references is lacking, e.g., for main memory consumption and optimality. In this paper, we describe one key technique for the referential compression against multiple references: The factorization of sequences. Based on the notion of an optimal factorization, we propose optimization heuristics and identify parameter settings which greatly influence 1) the size of the factorization, 2) the time for factorization, and 3) the required amount of main memory. We evaluate a total of 30 setups with a varying number of references on data from three different species. Our results show a wide range of factorization sizes (optimal to an overhead of up to 300%), factorization speed (0.01 MB/s to more than 600 MB/s), and main memory usage (few dozen MB to dozens of GB). Based on our evaluation, we identify the best configurations for common use cases. Our evaluation shows that multi-reference factorization is much better than single-reference factorization.
[Mh] Termos MeSH primário: Dispositivos de Armazenamento em Computador
Modelos Teóricos
[Mh] Termos MeSH secundário: Seres Humanos
[Pt] Tipo de publicação:JOURNAL ARTICLE
[Em] Mês de entrada:1605
[Cu] Atualização por classe:170220
[Lr] Data última revisão:
170220
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:151001
[St] Status:MEDLINE
[do] DOI:10.1371/journal.pone.0139000


  7 / 380 MEDLINE  
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[PMID]:26335720
[Au] Autor:Yalon E; Karpov I; Karpov V; Riess I; Kalaev D; Ritter D
[Ad] Endereço:Electrical Engineering Department, Technion - Israel Institute of Technology, Haifa 32000, Israel. eilamy@tx.technion.ac.il.
[Ti] Título:Detection of the insulating gap and conductive filament growth direction in resistive memories.
[So] Source:Nanoscale;7(37):15434-41, 2015 Oct 07.
[Is] ISSN:2040-3372
[Cp] País de publicação:England
[La] Idioma:eng
[Ab] Resumo:Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament and the semiconductor electrode can be detected by the metal-insulator-semiconductor bipolar transistor structure, and thus provide information on the filament growth direction. Using this technique, we show how voltage polarity and electrode chemistry control the filament growth direction during electro-forming. The experimental results and the nature of a gap between the filament and an electrode are discussed in light of possible models of filament formation.
[Mh] Termos MeSH primário: Dispositivos de Armazenamento em Computador
Eletrodos
Modelos Teóricos
Semicondutores
[Mh] Termos MeSH secundário: Condutividade Elétrica
Desenho de Equipamento
Nanotecnologia
[Pt] Tipo de publicação:JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T
[Em] Mês de entrada:1608
[Cu] Atualização por classe:150921
[Lr] Data última revisão:
150921
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:150904
[St] Status:MEDLINE
[do] DOI:10.1039/c5nr03314d


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[PMID]:26158524
[Au] Autor:An N; Wang R; Gao Y; Yang H; Qian D
[Ad] Endereço:State Key Laboratory of Software Development Environment, Beihang University, Beijing, China.
[Ti] Título:Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory.
[So] Source:PLoS One;10(7):e0131964, 2015.
[Is] ISSN:1932-6203
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:As DRAM is facing the scaling difficulty in terms of energy cost and reliability, some nonvolatile storage materials were proposed to be the substitute or supplement of main memory. Phase Change Memory (PCM) is one of the most promising nonvolatile memory that could be put into use in the near future. However, before becoming a qualified main memory technology, PCM should be designed reliably so that it can ensure the computer system's stable running even when errors occur. The typical wear-out errors in PCM have been well studied, but the transient errors, that caused by high-energy particles striking on the complementary metal-oxide semiconductor (CMOS) circuit of PCM chips or by resistance drifting in multi-level cell PCM, have attracted little focus. In this paper, we propose an innovative mechanism, Local-ECC-Global-ECPs (LEGE), which addresses both soft errors and hard errors (wear-out errors) in PCM memory systems. Our idea is to deploy a local error correction code (ECC) section to every data line, which can detect and correct one-bit errors immediately, and a global error correction pointers (ECPs) buffer for the whole memory chip, which can be reloaded to correct more hard error bits. The local ECC is used to detect and correct the unknown one-bit errors, and the global ECPs buffer is used to store the corrected value of hard errors. In comparison to ECP-6, our method provides almost identical lifetimes, but reduces approximately 50% storage overhead. Moreover, our structure reduces approximately 3.55% access latency overhead by increasing 1.61% storage overhead compared to PAYG, a hard error only solution.
[Mh] Termos MeSH primário: Semicondutores
[Mh] Termos MeSH secundário: Dispositivos de Armazenamento em Computador
Metais/química
Óxidos/química
[Pt] Tipo de publicação:JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T
[Nm] Nome de substância:
0 (Metals); 0 (Oxides)
[Em] Mês de entrada:1604
[Cu] Atualização por classe:150719
[Lr] Data última revisão:
150719
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:150710
[St] Status:MEDLINE
[do] DOI:10.1371/journal.pone.0131964


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[PMID]:26025439
[Au] Autor:Liu H; Ivanov K; Wang Y; Wang L
[Ad] Endereço:Biomedical Engineering Department, Harbin Institute of Technology, Harbin, 150001, China. he.liu@siat.ac.cn.
[Ti] Título:A novel method based on two cameras for accurate estimation of arterial oxygen saturation.
[So] Source:Biomed Eng Online;14:52, 2015 May 30.
[Is] ISSN:1475-925X
[Cp] País de publicação:England
[La] Idioma:eng
[Ab] Resumo:BACKGROUND: Photoplethysmographic imaging (PPGi) that is based on camera allows acquiring photoplethysmogram and measuring physiological parameters such as pulse rate, respiration rate and perfusion level. It has also shown potential for estimation of arterial oxygen saturation (SaO2). However, there are some technical limitations such as optical shunting, different camera sensitivity to different light spectra, different AC-to-DC ratios (the peak-to-peak amplitude to baseline ratio) of the PPGi signal for different portions of the sensor surface area, the low sampling rate and the inconsistency of contact force between the fingertip and camera lens. METHODS: In this paper, we take full account of the above-mentioned design challenges and present an accurate SaO2 estimation method based on two cameras. The hardware system we used consisted of an FPGA development board (XC6SLX150T-3FGG676 from Xilinx), with connected to it two commercial cameras and an SD card. The two cameras were placed back to back, one camera acquired PPGi signal from the right index fingertip under 660 nm light illumination while the other camera acquired PPGi signal from the thumb fingertip using an 800 nm light illumination. The both PPGi signals were captured simultaneously, recorded in a text file on the SD card and processed offline using MATLAB®. The calculation of SaO2 was based on the principle of pulse oximetry. The AC-to-DC ratio was acquired by the ratio of powers of AC and DC components of the PPGi signal in the time-frequency domain using the smoothed pseudo Wigner-Ville distribution. The calibration curve required for SaO2 measurement was obtained by linear regression analysis. RESULTS: The results of our estimation method from 12 subjects showed a high correlation and accuracy with those of conventional pulse oximetry for the range from 90 to 100%. CONCLUSIONS: Our method is suitable for mobile applications implemented in smartphones, which could allow SaO2 measurement in a pervasive environment.
[Mh] Termos MeSH primário: Oximetria/métodos
Oxigênio/sangue
Fotografia/instrumentação
Pletismografia/métodos
[Mh] Termos MeSH secundário: Absorção de Radiação
Adulto
Artefatos
Dispositivos de Armazenamento em Computador
Desenho de Equipamento
Feminino
Dedos/irrigação sanguínea
Hemoglobinometria/instrumentação
Hemoglobinometria/métodos
Seres Humanos
Iluminação
Masculino
Microcomputadores
Movimento (Física)
Oximetria/instrumentação
Oxiemoglobinas/análise
Pletismografia/instrumentação
Processamento de Sinais Assistido por Computador
Razão Sinal-Ruído
Smartphone
Distribuições Estatísticas
Polegar/irrigação sanguínea
Adulto Jovem
[Pt] Tipo de publicação:COMPARATIVE STUDY; JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T; VALIDATION STUDIES
[Nm] Nome de substância:
0 (Oxyhemoglobins); S88TT14065 (Oxygen)
[Em] Mês de entrada:1603
[Cu] Atualização por classe:170220
[Lr] Data última revisão:
170220
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:150531
[St] Status:MEDLINE
[do] DOI:10.1186/s12938-015-0045-1


  10 / 380 MEDLINE  
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[PMID]:25710872
[Au] Autor:Kim S; Du C; Sheridan P; Ma W; Choi S; Lu WD
[Ad] Endereço:Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109, United States.
[Ti] Título:Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity.
[So] Source:Nano Lett;15(3):2203-11, 2015 Mar 11.
[Is] ISSN:1530-6992
[Cp] País de publicação:United States
[La] Idioma:eng
[Ab] Resumo:Memristors have been extensively studied for data storage and low-power computation applications. In this study, we show that memristors offer more than simple resistance change. Specifically, the dynamic evolutions of internal state variables allow an oxide-based memristor to exhibit Ca(2+)-like dynamics that natively encode timing information and regulate synaptic weights. Such a device can be modeled as a second-order memristor and allow the implementation of critical synaptic functions realistically using simple spike forms based solely on spike activity.
[Mh] Termos MeSH primário: Materiais Biomiméticos
Dispositivos de Armazenamento em Computador
Memória/fisiologia
Redes Neurais (Computação)
Plasticidade Neuronal
Transmissão Sináptica
[Mh] Termos MeSH secundário: Potenciais de Ação
Animais
Projeto Auxiliado por Computador
Impedância Elétrica
Desenho de Equipamento
Análise de Falha de Equipamento
Seres Humanos
Rede Nervosa
[Pt] Tipo de publicação:JOURNAL ARTICLE; RESEARCH SUPPORT, NON-U.S. GOV'T; RESEARCH SUPPORT, U.S. GOV'T, NON-P.H.S.
[Em] Mês de entrada:1512
[Cu] Atualização por classe:150311
[Lr] Data última revisão:
150311
[Sb] Subgrupo de revista:IM
[Da] Data de entrada para processamento:150225
[St] Status:MEDLINE
[do] DOI:10.1021/acs.nanolett.5b00697



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